BDT61A-S Overview
This device has a DC current gain of 750 @ 1.5A 3V, which is the ratio between the base current and the collector current.As it features a collector emitter saturation voltage of 2.5V, it allows for maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 2.5V @ 6mA, 1.5A.An emitter's base voltage can be kept at 5V to gain high efficiency.Single BJT transistor is possible to have a collector current as low as 4A volts at Single BJT transistors maximum.
BDT61A-S Features
the DC current gain for this device is 750 @ 1.5A 3V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 6mA, 1.5A
the emitter base voltage is kept at 5V
BDT61A-S Applications
There are a lot of Bourns Inc. BDT61A-S applications of single BJT transistors.
- Muting
- Inverter
- Interface
- Driver
