FJPF5321TU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
FJPF5321TU Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Supplier Device Package
TO-220F
Operating Temperature
150°C TJ
Packaging
Tube
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Power - Max
40W
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
15 @ 600mA 5V
Current - Collector Cutoff (Max)
100μA ICBO
Vce Saturation (Max) @ Ib, Ic
1V @ 600mA, 3A
Voltage - Collector Emitter Breakdown (Max)
500V
Current - Collector (Ic) (Max)
5A
Frequency - Transition
14MHz
RoHS Status
ROHS3 Compliant
FJPF5321TU Product Details
FJPF5321TU Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 15 @ 600mA 5V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1V @ 600mA, 3A.The product comes in the supplier device package of TO-220F.The device has a 500V maximal voltage - Collector Emitter Breakdown.
FJPF5321TU Features
the DC current gain for this device is 15 @ 600mA 5V the vce saturation(Max) is 1V @ 600mA, 3A the supplier device package of TO-220F
FJPF5321TU Applications
There are a lot of Rochester Electronics, LLC FJPF5321TU applications of single BJT transistors.