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FJPF5321TU

FJPF5321TU

FJPF5321TU

Rochester Electronics, LLC

FJPF5321TU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website

SOT-23

FJPF5321TU Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Supplier Device Package TO-220F
Operating Temperature150°C TJ
PackagingTube
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 40W
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 600mA 5V
Current - Collector Cutoff (Max) 100μA ICBO
Vce Saturation (Max) @ Ib, Ic 1V @ 600mA, 3A
Voltage - Collector Emitter Breakdown (Max) 500V
Current - Collector (Ic) (Max) 5A
Frequency - Transition 14MHz
RoHS StatusROHS3 Compliant
In-Stock:3781 items

FJPF5321TU Product Details

FJPF5321TU Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 15 @ 600mA 5V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1V @ 600mA, 3A.The product comes in the supplier device package of TO-220F.The device has a 500V maximal voltage - Collector Emitter Breakdown.

FJPF5321TU Features


the DC current gain for this device is 15 @ 600mA 5V
the vce saturation(Max) is 1V @ 600mA, 3A
the supplier device package of TO-220F

FJPF5321TU Applications


There are a lot of Rochester Electronics, LLC FJPF5321TU applications of single BJT transistors.

  • Driver
  • Interface
  • Inverter
  • Muting

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