Welcome to Hotenda.com Online Store!

logo
userjoin
Home

TIP31C-S

TIP31C-S

TIP31C-S

Bourns Inc.

TIP31C-S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Bourns Inc. stock available on our website

SOT-23

TIP31C-S Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Operating Temperature-65°C~150°C TJ
PackagingTube
Published 1993
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation40W
Base Part Number TIP31
Number of Elements 1
Configuration Single
Power Dissipation40W
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 100V
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 3A 4V
Current - Collector Cutoff (Max) 300μA
Vce Saturation (Max) @ Ib, Ic 1.2V @ 375mA, 3A
Collector Emitter Breakdown Voltage100V
Collector Base Voltage (VCBO) 140V
Emitter Base Voltage (VEBO) 5V
Radiation HardeningNo
RoHS StatusROHS3 Compliant
In-Stock:3698 items

TIP31C-S Product Details

TIP31C-S Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 10 @ 3A 4V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.The emitter base voltage can be kept at 5V for high efficiency.A maximum collector current of 3A volts can be achieved.

TIP31C-S Features


the DC current gain for this device is 10 @ 3A 4V
the vce saturation(Max) is 1.2V @ 375mA, 3A
the emitter base voltage is kept at 5V

TIP31C-S Applications


There are a lot of Bourns Inc. TIP31C-S applications of single BJT transistors.

  • Driver
  • Muting
  • Interface
  • Inverter

Get Subscriber

Enter Your Email Address, Get the Latest News