TIPL761B-S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Bourns Inc. stock available on our website
SOT-23
TIPL761B-S Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-218-3
Number of Pins
3
Supplier Device Package
SOT-93
Packaging
Tube
Published
2012
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Power Dissipation
100W
Base Part Number
TIPL761
Polarity
NPN
Power - Max
100W
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
1V
Max Collector Current
4A
DC Current Gain (hFE) (Min) @ Ic, Vce
20 @ 500μA 5V
Current - Collector Cutoff (Max)
50μA
Vce Saturation (Max) @ Ib, Ic
1V @ 400mA, 2A
Collector Emitter Breakdown Voltage
500V
Voltage - Collector Emitter Breakdown (Max)
500V
Current - Collector (Ic) (Max)
4A
Frequency - Transition
12MHz
RoHS Status
ROHS3 Compliant
TIPL761B-S Product Details
TIPL761B-S Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 20 @ 500μA 5V.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Supplier device package SOT-93 comes with the product.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.Maximum collector currents can be below 4A volts.
TIPL761B-S Features
the DC current gain for this device is 20 @ 500μA 5V the vce saturation(Max) is 1V @ 400mA, 2A the supplier device package of SOT-93
TIPL761B-S Applications
There are a lot of Bourns Inc. TIPL761B-S applications of single BJT transistors.