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TIPL761B-S

TIPL761B-S

TIPL761B-S

Bourns Inc.

TIPL761B-S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Bourns Inc. stock available on our website

SOT-23

TIPL761B-S Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-218-3
Number of Pins 3
Supplier Device Package SOT-93
PackagingTube
Published 2012
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation100W
Base Part Number TIPL761
Polarity NPN
Power - Max 100W
Transistor Type NPN
Collector Emitter Voltage (VCEO) 1V
Max Collector Current 4A
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 500μA 5V
Current - Collector Cutoff (Max) 50μA
Vce Saturation (Max) @ Ib, Ic 1V @ 400mA, 2A
Collector Emitter Breakdown Voltage500V
Voltage - Collector Emitter Breakdown (Max) 500V
Current - Collector (Ic) (Max) 4A
Frequency - Transition 12MHz
RoHS StatusROHS3 Compliant
In-Stock:3221 items

TIPL761B-S Product Details

TIPL761B-S Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 20 @ 500μA 5V.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Supplier device package SOT-93 comes with the product.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.Maximum collector currents can be below 4A volts.

TIPL761B-S Features


the DC current gain for this device is 20 @ 500μA 5V
the vce saturation(Max) is 1V @ 400mA, 2A
the supplier device package of SOT-93

TIPL761B-S Applications


There are a lot of Bourns Inc. TIPL761B-S applications of single BJT transistors.

  • Interface
  • Muting
  • Inverter
  • Driver

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