BUL213 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available on our website
SOT-23
BUL213 Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Additional Feature
HIGH RELIABILITY
Subcategory
Other Transistors
Voltage - Rated DC
600V
Max Power Dissipation
60W
Current Rating
3A
Base Part Number
BUL213
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
60W
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
600V
Max Collector Current
3A
DC Current Gain (hFE) (Min) @ Ic, Vce
16 @ 350mA 3V
Current - Collector Cutoff (Max)
250μA
JEDEC-95 Code
TO-220AB
Vce Saturation (Max) @ Ib, Ic
900mV @ 200mA, 1A
Collector Emitter Breakdown Voltage
600V
Collector Base Voltage (VCBO)
1.3kV
Emitter Base Voltage (VEBO)
9V
hFE Min
16
Turn Off Time-Max (toff)
6420ns
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1,000
$1.05053
$1.05053
BUL213 Product Details
BUL213 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 16 @ 350mA 3V.A VCE saturation (Max) of 900mV @ 200mA, 1A means Ic has reached its maximum value(saturated).Emitter base voltages of 9V can achieve high levels of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (3A).A maximum collector current of 3A volts can be achieved.
BUL213 Features
the DC current gain for this device is 16 @ 350mA 3V the vce saturation(Max) is 900mV @ 200mA, 1A the emitter base voltage is kept at 9V the current rating of this device is 3A
BUL213 Applications
There are a lot of STMicroelectronics BUL213 applications of single BJT transistors.