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BDP954E6327HTSA1

BDP954E6327HTSA1

BDP954E6327HTSA1

Infineon Technologies

BDP954E6327HTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available on our website

SOT-23

BDP954E6327HTSA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Power - Max 5W
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 85 @ 500mA 1V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 200mA, 2A
Voltage - Collector Emitter Breakdown (Max) 100V
Current - Collector (Ic) (Max) 3A
Frequency - Transition 100MHz
RoHS Status RoHS Compliant
BDP954E6327HTSA1 Product Details

BDP954E6327HTSA1 Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 85 @ 500mA 1V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 200mA, 2A.This device displays a 100V maximum voltage - Collector Emitter Breakdown.

BDP954E6327HTSA1 Features


the DC current gain for this device is 85 @ 500mA 1V
the vce saturation(Max) is 500mV @ 200mA, 2A

BDP954E6327HTSA1 Applications


There are a lot of Infineon Technologies BDP954E6327HTSA1 applications of single BJT transistors.

  • Driver
  • Muting
  • Inverter
  • Interface

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BCX5410E6327

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