BDP954E6327HTSA1 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 85 @ 500mA 1V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 200mA, 2A.This device displays a 100V maximum voltage - Collector Emitter Breakdown.
BDP954E6327HTSA1 Features
the DC current gain for this device is 85 @ 500mA 1V
the vce saturation(Max) is 500mV @ 200mA, 2A
BDP954E6327HTSA1 Applications
There are a lot of Infineon Technologies BDP954E6327HTSA1 applications of single BJT transistors.
- Driver
- Muting
- Inverter
- Interface
