2N5883G Overview

In this device, the DC current gain is 20 @ 10A 4V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of 1V ensures maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 4V @ 6.25A, 25A.An emitter's base voltage can be kept at 5V to gain high efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 4MHz in the part.Single BJT transistor is possible to have a collector current as low as 25A volts at Single BJT transistors maximum.

2N5883G Features

the DC current gain for this device is 20 @ 10A 4V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 4V @ 6.25A, 25A
the emitter base voltage is kept at 5V
the current rating of this device is 25A
a transition frequency of 4MHz

2N5883G Applications

There are a lot of ON Semiconductor 2N5883G applications of single BJT transistors.

• Inverter
• Muting
• Interface
• Driver