BCX51-10F datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
SOT-23
BCX51-10F Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-243AA
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2011
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Max Power Dissipation
500mW
Terminal Position
SINGLE
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
BCX51
Pin Count
3
Reference Standard
AEC-Q101; IEC-60134
JESD-30 Code
R-PSSO-F3
Number of Elements
1
Configuration
SINGLE
Case Connection
COLLECTOR
Power - Max
500mW
Transistor Application
SWITCHING
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
500mV
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
63 @ 150mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage
45V
Transition Frequency
145MHz
Frequency - Transition
145MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
4,000
$0.11534
$0.46136
BCX51-10F Product Details
BCX51-10F Overview
DC current gain in this device equals 63 @ 150mA 2V, which is the ratio of the base current to the collector current.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 50mA, 500mA.145MHz is present in the transition frequency.When collector current reaches its maximum, it can reach 1A volts.
BCX51-10F Features
the DC current gain for this device is 63 @ 150mA 2V the vce saturation(Max) is 500mV @ 50mA, 500mA a transition frequency of 145MHz
BCX51-10F Applications
There are a lot of Nexperia USA Inc. BCX51-10F applications of single BJT transistors.