PN3565 PBFREE datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Central Semiconductor Corp stock available on our website
SOT-23
PN3565 PBFREE Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
20 Weeks
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Operating Temperature
-65°C~150°C TJ
Packaging
Bulk
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Terminal Finish
Matte Tin (Sn)
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Power - Max
625mW
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
150 @ 1mA 10V
Current - Collector Cutoff (Max)
50nA ICBO
Vce Saturation (Max) @ Ib, Ic
350mV @ 100μA, 1mA
Voltage - Collector Emitter Breakdown (Max)
25V
Current - Collector (Ic) (Max)
50mA
Frequency - Transition
240MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.834833
$0.834833
10
$0.787579
$7.87579
100
$0.742999
$74.2999
500
$0.700942
$350.471
1000
$0.661267
$661.267
PN3565 PBFREE Product Details
PN3565 PBFREE Overview
This device has a DC current gain of 150 @ 1mA 10V, which is the ratio between the base current and the collector current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Detection of Collector Emitter Breakdown at 25V maximal voltage is present.
PN3565 PBFREE Features
the DC current gain for this device is 150 @ 1mA 10V the vce saturation(Max) is 350mV @ 100μA, 1mA
PN3565 PBFREE Applications
There are a lot of Central Semiconductor Corp PN3565 PBFREE applications of single BJT transistors.