Welcome to Hotenda.com Online Store!

logo
userjoin
Home

PN3565 PBFREE

PN3565 PBFREE

PN3565 PBFREE

Central Semiconductor Corp

PN3565 PBFREE datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Central Semiconductor Corp stock available on our website

SOT-23

PN3565 PBFREE Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 20 Weeks
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Operating Temperature-65°C~150°C TJ
PackagingBulk
JESD-609 Code e3
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Matte Tin (Sn)
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Power - Max 625mW
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 150 @ 1mA 10V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 350mV @ 100μA, 1mA
Voltage - Collector Emitter Breakdown (Max) 25V
Current - Collector (Ic) (Max) 50mA
Frequency - Transition 240MHz
RoHS StatusROHS3 Compliant
In-Stock:7470 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.834833$0.834833
10$0.787579$7.87579
100$0.742999$74.2999
500$0.700942$350.471
1000$0.661267$661.267

PN3565 PBFREE Product Details

PN3565 PBFREE Overview


This device has a DC current gain of 150 @ 1mA 10V, which is the ratio between the base current and the collector current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Detection of Collector Emitter Breakdown at 25V maximal voltage is present.

PN3565 PBFREE Features


the DC current gain for this device is 150 @ 1mA 10V
the vce saturation(Max) is 350mV @ 100μA, 1mA

PN3565 PBFREE Applications


There are a lot of Central Semiconductor Corp PN3565 PBFREE applications of single BJT transistors.

  • Muting
  • Interface
  • Driver
  • Inverter

Get Subscriber

Enter Your Email Address, Get the Latest News