2SB1123S-TD-E Overview
This device has a DC current gain of 100 @ 100mA 2V, which is the ratio between the base current and the collector current.The collector emitter saturation voltage is -300mV, giving you a wide variety of design options.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 700mV @ 50mA, 1A.Keeping the emitter base voltage at 6V can result in a high level of efficiency.In the part, the transition frequency is 150MHz.Single BJT transistor can be broken down at a voltage of 50V volts.Maximum collector currents can be below 2A volts.
2SB1123S-TD-E Features
the DC current gain for this device is 100 @ 100mA 2V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 700mV @ 50mA, 1A
the emitter base voltage is kept at 6V
a transition frequency of 150MHz
2SB1123S-TD-E Applications
There are a lot of ON Semiconductor 2SB1123S-TD-E applications of single BJT transistors.
- Muting
- Inverter
- Interface
- Driver
