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2N3117 PBFREE

2N3117 PBFREE

2N3117 PBFREE

Central Semiconductor Corp

2N3117 PBFREE datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Central Semiconductor Corp stock available on our website

SOT-23

2N3117 PBFREE Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 6 Weeks
Mounting Type Through Hole
Package / Case TO-206AA, TO-18-3 Metal Can
Operating Temperature-65°C~200°C TJ
PackagingBulk
JESD-609 Code e3
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish MATTE TIN OVER NICKEL
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Power - Max 360mW
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 250 @ 10μA 5V
Current - Collector Cutoff (Max) 10nA ICBO
Vce Saturation (Max) @ Ib, Ic 350mV @ 100μA, 1mA
Voltage - Collector Emitter Breakdown (Max) 60V
Current - Collector (Ic) (Max) 50mA
RoHS StatusROHS3 Compliant
In-Stock:1384 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$5.853772$5.853772
10$5.522426$55.22426
100$5.209836$520.9836
500$4.914940$2457.47
1000$4.636736$4636.736

2N3117 PBFREE Product Details

2N3117 PBFREE Overview


This device has a DC current gain of 250 @ 10μA 5V, which is the ratio between the collector current and the base current.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.This device displays a 60V maximum voltage - Collector Emitter Breakdown.

2N3117 PBFREE Features


the DC current gain for this device is 250 @ 10μA 5V
the vce saturation(Max) is 350mV @ 100μA, 1mA

2N3117 PBFREE Applications


There are a lot of Central Semiconductor Corp 2N3117 PBFREE applications of single BJT transistors.

  • Interface
  • Driver
  • Inverter
  • Muting

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