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2N3117 PBFREE

  • 2N3117 PBFREE
  • 2N3117 PBFREE

2N3117 PBFREE

2N3117 PBFREE

Central Semiconductor Corp

2N3117 PBFREE datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Central Semiconductor Corp stock available on our website

SOT-23

2N3117 PBFREE Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 6 Weeks
Mounting Type Through Hole
Package / Case TO-206AA, TO-18-3 Metal Can
Operating Temperature -65°C~200°C TJ
Packaging Bulk
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish MATTE TIN OVER NICKEL
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Power - Max 360mW
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 250 @ 10μA 5V
Current - Collector Cutoff (Max) 10nA ICBO
Vce Saturation (Max) @ Ib, Ic 350mV @ 100μA, 1mA
Voltage - Collector Emitter Breakdown (Max) 60V
Current - Collector (Ic) (Max) 50mA
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $5.853772 $5.853772
10 $5.522426 $55.22426
100 $5.209836 $520.9836
500 $4.914940 $2457.47
1000 $4.636736 $4636.736
2N3117 PBFREE Product Details

2N3117 PBFREE Overview


This device has a DC current gain of 250 @ 10μA 5V, which is the ratio between the collector current and the base current.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.This device displays a 60V maximum voltage - Collector Emitter Breakdown.

2N3117 PBFREE Features


the DC current gain for this device is 250 @ 10μA 5V
the vce saturation(Max) is 350mV @ 100μA, 1mA

2N3117 PBFREE Applications


There are a lot of Central Semiconductor Corp 2N3117 PBFREE applications of single BJT transistors.

  • Interface
  • Driver
  • Inverter
  • Muting

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