MJD210TF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
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MJD210TF Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
6 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins
3
Weight
260.37mg
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2014
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
-40V
Max Power Dissipation
1.4W
Terminal Form
GULL WING
Current Rating
-5A
Frequency
65MHz
Base Part Number
MJD210
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Element Configuration
Single
Power Dissipation
1.4W
Gain Bandwidth Product
65MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
25V
Max Collector Current
5A
DC Current Gain (hFE) (Min) @ Ic, Vce
45 @ 2A 1V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
1.8V @ 1A, 5A
Collector Emitter Breakdown Voltage
25V
Transition Frequency
65MHz
Max Breakdown Voltage
25V
Collector Base Voltage (VCBO)
-40V
Emitter Base Voltage (VEBO)
-8V
hFE Min
45
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.118023
$0.118023
10
$0.111342
$1.11342
100
$0.105040
$10.504
500
$0.099094
$49.547
1000
$0.093485
$93.485
MJD210TF Product Details
MJD210TF Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 45 @ 2A 1V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1.8V @ 1A, 5A.An emitter's base voltage can be kept at -8V to gain high efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.Parts of this part have transition frequencies of 65MHz.A breakdown input voltage of 25V volts can be used.Collector current can be as low as 5A volts at its maximum.
MJD210TF Features
the DC current gain for this device is 45 @ 2A 1V the vce saturation(Max) is 1.8V @ 1A, 5A the emitter base voltage is kept at -8V the current rating of this device is -5A a transition frequency of 65MHz
MJD210TF Applications
There are a lot of ON Semiconductor MJD210TF applications of single BJT transistors.