BC846BW,115 Overview

As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 200 @ 2mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 200mV, which allows maximum flexibilSingle BJT transistory in design.A VCE saturation (Max) of 400mV @ 5mA, 100mA means Ic has reached its maximum value(saturated).If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.A transition frequency of 100MHz is present in the part.Single BJT transistor is possible to have a collector current as low as 100mA volts at Single BJT transistors maximum.

BC846BW,115 Features

the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 400mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz

BC846BW,115 Applications

There are a lot of Nexperia USA Inc. BC846BW,115 applications of single BJT transistors.

• Driver
• Muting
• Interface
• Inverter