BCP56-16 Overview

As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 150mA 2V.A collector emitter saturation voltage of 500mV ensures maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 50mA, 500mA.The base voltage of the emitter can be kept at 5V to achieve high efficiency.A transition frequency of 120MHz is present in the part.Single BJT transistor can be broken down at a voltage of 80V volts.Collector current can be as low as 1A volts at its maximum.

BCP56-16 Features

the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 120MHz

BCP56-16 Applications

There are a lot of STMicroelectronics BCP56-16 applications of single BJT transistors.

• Driver
• Interface
• Inverter
• Muting