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BCW66HVL

  • BCW66HVL
  • BCW66HVL

BCW66HVL

BCW66HVL

Nexperia USA Inc.

BCW66HVL datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

BCW66HVL Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2017
Series Automotive, AEC-Q101
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Pin Count 3
Power - Max 250mW
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 250 @ 100mA 1V
Current - Collector Cutoff (Max) 5μA ICBO
Vce Saturation (Max) @ Ib, Ic 450mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 45V
Current - Collector (Ic) (Max) 800mA
Frequency - Transition 100MHz
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.165000 $0.165
10 $0.155660 $1.5566
100 $0.146849 $14.6849
500 $0.138537 $69.2685
1000 $0.130695 $130.695
BCW66HVL Product Details

BCW66HVL Overview


In this device, the DC current gain is 250 @ 100mA 1V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 450mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).Collector Emitter Breakdown occurs at 45VV - Maximum voltage.

BCW66HVL Features


the DC current gain for this device is 250 @ 100mA 1V
the vce saturation(Max) is 450mV @ 50mA, 500mA

BCW66HVL Applications


There are a lot of Nexperia USA Inc. BCW66HVL applications of single BJT transistors.

  • Muting
  • Driver
  • Inverter
  • Interface

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