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2N3391A PBFREE

2N3391A PBFREE

2N3391A PBFREE

Central Semiconductor Corp

2N3391A PBFREE datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Central Semiconductor Corp stock available on our website

SOT-23

2N3391A PBFREE Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 20 Weeks
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Operating Temperature -65°C~150°C TJ
Packaging Bulk
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish MATTE TIN OVER NICKEL
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 250 @ 2mA 4.5V
Current - Collector Cutoff (Max) 100nA ICBO
Voltage - Collector Emitter Breakdown (Max) 25V
Frequency - Transition 120MHz
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.625131 $0.625131
10 $0.589746 $5.89746
100 $0.556365 $55.6365
500 $0.524873 $262.4365
1000 $0.495163 $495.163
2N3391A PBFREE Product Details

2N3391A PBFREE Overview


In this device, the DC current gain is 250 @ 2mA 4.5V, which is the ratio between the base current and the collector current.Detection of Collector Emitter Breakdown at 25V maximal voltage is present.

2N3391A PBFREE Features


the DC current gain for this device is 250 @ 2mA 4.5V

2N3391A PBFREE Applications


There are a lot of Central Semiconductor Corp 2N3391A PBFREE applications of single BJT transistors.

  • Inverter
  • Driver
  • Interface
  • Muting

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