2N3391A PBFREE datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Central Semiconductor Corp stock available on our website
SOT-23
2N3391A PBFREE Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
20 Weeks
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Operating Temperature
-65°C~150°C TJ
Packaging
Bulk
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Terminal Finish
MATTE TIN OVER NICKEL
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
250 @ 2mA 4.5V
Current - Collector Cutoff (Max)
100nA ICBO
Voltage - Collector Emitter Breakdown (Max)
25V
Frequency - Transition
120MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.625131
$0.625131
10
$0.589746
$5.89746
100
$0.556365
$55.6365
500
$0.524873
$262.4365
1000
$0.495163
$495.163
2N3391A PBFREE Product Details
2N3391A PBFREE Overview
In this device, the DC current gain is 250 @ 2mA 4.5V, which is the ratio between the base current and the collector current.Detection of Collector Emitter Breakdown at 25V maximal voltage is present.
2N3391A PBFREE Features
the DC current gain for this device is 250 @ 2mA 4.5V
2N3391A PBFREE Applications
There are a lot of Central Semiconductor Corp 2N3391A PBFREE applications of single BJT transistors.