SMMBT4403LT1G Description


SMMBT4403LT1G is a Switching Transistor PNP Silicon.

Just look at semiconductor's PNP SMMBT4403LT1G universal bipolar junction transistor, which can be easily operated in a high voltage range. The maximum emitter base voltage of the bipolar junction transistor is 5V and the maximum power consumption is 300mW. The assembly will be shipped in tape and reel packaging for effective installation and safe delivery. The maximum collector emitter voltage is 40V and the maximum emitter base voltage is 5V. The lowest operating temperature of the bipolar junction transistor is-55 °C and the highest operating temperature is 150 °C.
Features

?S Prefix for Automotive and Other Applications
Requiring Unique Site and Control Change Requirements;AEC-Q101 Qualified and PPAP Capable

?These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant


SMMBT4403LT1G Features

? Input operating voltage range (VIN): 1.6 V to 5.5 V
? Maximum continuous current (IMAX): 1.5 A
? On-Resistance (RON): – 5-V VIN: 89 m? (typical) – 3.6-V VIN: 90 m? (typical) – 1.8-V VIN: 105 m? (typical) ? Output short protection (ISC): 3 A (typical)
? Low power consumption: – ON state (IQ): 8 μA (typical) – OFF state (ISD): 2 nA (typical)
? Smart ON pin pull down (RPD): – ON ≥ VIH (ION): 100 nA (maximum) – ON ≤ VIL (RPD): 530 kΩ (typical)
? Slow Turn ON timing to limit inrush current (tON): – 5.0 V Turn ON time (tON): 1.95 ms at 3.2 mV/μs – 3.6 V Turn ON time (tON): 1.75 ms at 2.7 mV/μs – 1.8 V Turn ON time (tON): 1.5 ms at 1.8 mV/μs
? Adjustable output discharge and fall time: – Internal QOD resistance = 24 Ω (typical)

SMMBT4403LT1G Applications

? Personal electronics
? Set top box
? HDTV
? Multi function printer