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2N3716 PBFREE

2N3716 PBFREE

2N3716 PBFREE

Central Semiconductor Corp

2N3716 PBFREE datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Central Semiconductor Corp stock available on our website

SOT-23

2N3716 PBFREE Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 22 Weeks
Mounting Type Through Hole
Package / Case TO-204AA, TO-3
Operating Temperature-65°C~200°C TJ
PackagingTube
JESD-609 Code e3
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish MATTE TIN OVER NICKEL
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Power - Max 150W
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 1A 2V
Vce Saturation (Max) @ Ib, Ic 800mV @ 500mA, 5A
Voltage - Collector Emitter Breakdown (Max) 80V
Current - Collector (Ic) (Max) 10A
Frequency - Transition 4MHz
RoHS StatusROHS3 Compliant
In-Stock:1279 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$6.436878$6.436878
10$6.072527$60.72527
100$5.728798$572.8798
500$5.404527$2702.2635
1000$5.098610$5098.61

2N3716 PBFREE Product Details

2N3716 PBFREE Overview


This device has a DC current gain of 50 @ 1A 2V, which is the ratio between the base current and the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 800mV @ 500mA, 5A.The device exhibits a collector-emitter breakdown at 80V.

2N3716 PBFREE Features


the DC current gain for this device is 50 @ 1A 2V
the vce saturation(Max) is 800mV @ 500mA, 5A

2N3716 PBFREE Applications


There are a lot of Central Semiconductor Corp 2N3716 PBFREE applications of single BJT transistors.

  • Interface
  • Driver
  • Muting
  • Inverter

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