2N3716 PBFREE datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Central Semiconductor Corp stock available on our website
SOT-23
2N3716 PBFREE Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
22 Weeks
Mounting Type
Through Hole
Package / Case
TO-204AA, TO-3
Operating Temperature
-65°C~200°C TJ
Packaging
Tube
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Terminal Finish
MATTE TIN OVER NICKEL
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Power - Max
150W
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
50 @ 1A 2V
Vce Saturation (Max) @ Ib, Ic
800mV @ 500mA, 5A
Voltage - Collector Emitter Breakdown (Max)
80V
Current - Collector (Ic) (Max)
10A
Frequency - Transition
4MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$6.436878
$6.436878
10
$6.072527
$60.72527
100
$5.728798
$572.8798
500
$5.404527
$2702.2635
1000
$5.098610
$5098.61
2N3716 PBFREE Product Details
2N3716 PBFREE Overview
This device has a DC current gain of 50 @ 1A 2V, which is the ratio between the base current and the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 800mV @ 500mA, 5A.The device exhibits a collector-emitter breakdown at 80V.
2N3716 PBFREE Features
the DC current gain for this device is 50 @ 1A 2V the vce saturation(Max) is 800mV @ 500mA, 5A
2N3716 PBFREE Applications
There are a lot of Central Semiconductor Corp 2N3716 PBFREE applications of single BJT transistors.