2N4424 PBFREE datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Central Semiconductor Corp stock available on our website
SOT-23
2N4424 PBFREE Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
6 Weeks
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Operating Temperature
-65°C~150°C TJ
Packaging
Bulk
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Terminal Finish
Matte Tin (Sn)
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Power - Max
625mW
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
180 @ 2mA 4.5V
Current - Collector Cutoff (Max)
30nA
Vce Saturation (Max) @ Ib, Ic
300mV @ 3mA, 50mA
Voltage - Collector Emitter Breakdown (Max)
40V
Current - Collector (Ic) (Max)
500mA
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.318032
$0.318032
10
$0.300030
$3.0003
100
$0.283047
$28.3047
500
$0.267025
$133.5125
1000
$0.251911
$251.911
2N4424 PBFREE Product Details
2N4424 PBFREE Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 180 @ 2mA 4.5V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Collector Emitter Breakdown occurs at 40VV - Maximum voltage.
2N4424 PBFREE Features
the DC current gain for this device is 180 @ 2mA 4.5V the vce saturation(Max) is 300mV @ 3mA, 50mA
2N4424 PBFREE Applications
There are a lot of Central Semiconductor Corp 2N4424 PBFREE applications of single BJT transistors.