2SC1815 PBFREE datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Central Semiconductor Corp stock available on our website
SOT-23
2SC1815 PBFREE Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
6 Weeks
Packaging
Bulk
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Power - Max
400mW
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
70 @ 2mA 6V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
250mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max)
50V
Current - Collector (Ic) (Max)
150mA
Frequency - Transition
80MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.852723
$0.852723
10
$0.804455
$8.04455
100
$0.758920
$75.892
500
$0.715962
$357.981
1000
$0.675436
$675.436
2SC1815 PBFREE Product Details
2SC1815 PBFREE Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 70 @ 2mA 6V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 250mV @ 10mA, 100mA.Detection of Collector Emitter Breakdown at 50V maximal voltage is present.
2SC1815 PBFREE Features
the DC current gain for this device is 70 @ 2mA 6V the vce saturation(Max) is 250mV @ 10mA, 100mA
2SC1815 PBFREE Applications
There are a lot of Central Semiconductor Corp 2SC1815 PBFREE applications of single BJT transistors.