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2SC1815 PBFREE

2SC1815 PBFREE

2SC1815 PBFREE

Central Semiconductor Corp

2SC1815 PBFREE datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Central Semiconductor Corp stock available on our website

SOT-23

2SC1815 PBFREE Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 6 Weeks
PackagingBulk
JESD-609 Code e3
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Power - Max 400mW
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 2mA 6V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 250mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Current - Collector (Ic) (Max) 150mA
Frequency - Transition 80MHz
RoHS StatusROHS3 Compliant
In-Stock:6854 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.852723$0.852723
10$0.804455$8.04455
100$0.758920$75.892
500$0.715962$357.981
1000$0.675436$675.436

2SC1815 PBFREE Product Details

2SC1815 PBFREE Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 70 @ 2mA 6V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 250mV @ 10mA, 100mA.Detection of Collector Emitter Breakdown at 50V maximal voltage is present.

2SC1815 PBFREE Features


the DC current gain for this device is 70 @ 2mA 6V
the vce saturation(Max) is 250mV @ 10mA, 100mA

2SC1815 PBFREE Applications


There are a lot of Central Semiconductor Corp 2SC1815 PBFREE applications of single BJT transistors.

  • Driver
  • Interface
  • Muting
  • Inverter

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