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DXTN07025BFG-7

DXTN07025BFG-7

DXTN07025BFG-7

Diodes Incorporated

DXTN07025BFG-7 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

DXTN07025BFG-7 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 15 Weeks
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 900mW
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1A 2V
Current - Collector Cutoff (Max) 20nA ICBO
Vce Saturation (Max) @ Ib, Ic 400mV @ 300mA, 3A
Voltage - Collector Emitter Breakdown (Max) 25V
Current - Collector (Ic) (Max) 3A
Frequency - Transition 240MHz
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
2,000 $0.22533 $0.45066
6,000 $0.21239 $1.27434
10,000 $0.19944 $1.9944
50,000 $0.19728 $9.864
DXTN07025BFG-7 Product Details

DXTN07025BFG-7 Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 1A 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 300mA, 3A.The device exhibits a collector-emitter breakdown at 25V.

DXTN07025BFG-7 Features


the DC current gain for this device is 100 @ 1A 2V
the vce saturation(Max) is 400mV @ 300mA, 3A

DXTN07025BFG-7 Applications


There are a lot of Diodes Incorporated DXTN07025BFG-7 applications of single BJT transistors.

  • Muting
  • Inverter
  • Driver
  • Interface

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