DXTN07025BFG-7 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
DXTN07025BFG-7 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Mounting Type
Surface Mount
Package / Case
8-PowerVDFN
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Power - Max
900mW
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 1A 2V
Current - Collector Cutoff (Max)
20nA ICBO
Vce Saturation (Max) @ Ib, Ic
400mV @ 300mA, 3A
Voltage - Collector Emitter Breakdown (Max)
25V
Current - Collector (Ic) (Max)
3A
Frequency - Transition
240MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
2,000
$0.22533
$0.45066
6,000
$0.21239
$1.27434
10,000
$0.19944
$1.9944
50,000
$0.19728
$9.864
DXTN07025BFG-7 Product Details
DXTN07025BFG-7 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 1A 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 300mA, 3A.The device exhibits a collector-emitter breakdown at 25V.
DXTN07025BFG-7 Features
the DC current gain for this device is 100 @ 1A 2V the vce saturation(Max) is 400mV @ 300mA, 3A
DXTN07025BFG-7 Applications
There are a lot of Diodes Incorporated DXTN07025BFG-7 applications of single BJT transistors.