PN2222ATF Overview
This device has a DC current gain of 100 @ 150mA 10V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 1V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 50mA, 500mA.With the emitter base voltage set at 6V, an efficient operation can be achieved.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (1A).A transition frequency of 300MHz is present in the part.A breakdown input voltage of 40V volts can be used.Collector current can be as low as 1A volts at its maximum.
PN2222ATF Features
the DC current gain for this device is 100 @ 150mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 50mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 1A
a transition frequency of 300MHz
PN2222ATF Applications
There are a lot of ON Semiconductor PN2222ATF applications of single BJT transistors.
- Interface
- Inverter
- Muting
- Driver
