PN2222ATF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
PN2222ATF Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
6 Weeks
Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins
3
Weight
240mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2007
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
40V
Max Power Dissipation
625mW
Terminal Position
BOTTOM
Current Rating
1A
Frequency
300MHz
Base Part Number
PN2222
Number of Elements
1
Element Configuration
Single
Power Dissipation
625mW
Transistor Application
SWITCHING
Gain Bandwidth Product
300MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
40V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 150mA 10V
Current - Collector Cutoff (Max)
10nA ICBO
Vce Saturation (Max) @ Ib, Ic
1V @ 50mA, 500mA
Collector Emitter Breakdown Voltage
40V
Transition Frequency
300MHz
Collector Emitter Saturation Voltage
1V
Max Breakdown Voltage
40V
Collector Base Voltage (VCBO)
75V
Emitter Base Voltage (VEBO)
6V
hFE Min
100
Turn Off Time-Max (toff)
285ns
Height
5.33mm
Length
5.2mm
Width
4.19mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.117480
$0.11748
10
$0.110830
$1.1083
100
$0.104557
$10.4557
500
$0.098638
$49.319
1000
$0.093055
$93.055
PN2222ATF Product Details
PN2222ATF Overview
This device has a DC current gain of 100 @ 150mA 10V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 1V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 50mA, 500mA.With the emitter base voltage set at 6V, an efficient operation can be achieved.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (1A).A transition frequency of 300MHz is present in the part.A breakdown input voltage of 40V volts can be used.Collector current can be as low as 1A volts at its maximum.
PN2222ATF Features
the DC current gain for this device is 100 @ 150mA 10V a collector emitter saturation voltage of 1V the vce saturation(Max) is 1V @ 50mA, 500mA the emitter base voltage is kept at 6V the current rating of this device is 1A a transition frequency of 300MHz
PN2222ATF Applications
There are a lot of ON Semiconductor PN2222ATF applications of single BJT transistors.