MSA1162YT1 Overview

DC current gain in this device equals 120 @ 2mA 6V, which is the ratio of the base current to the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 500mV.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 10mA, 100mA.Keeping the emitter base voltage at 7V can result in a high level of efficiency.The current rating of this fuse is -100mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.As a result, the part has a transition frequency of 80MHz.Collector current can be as low as 100mA volts at its maximum.

MSA1162YT1 Features

the DC current gain for this device is 120 @ 2mA 6V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 10mA, 100mA
the emitter base voltage is kept at 7V
the current rating of this device is -100mA
a transition frequency of 80MHz

MSA1162YT1 Applications

There are a lot of ON Semiconductor MSA1162YT1 applications of single BJT transistors.

• Interface
• Inverter
• Muting
• Driver