NSS12600CF8T1G Overview

In this device, the DC current gain is 250 @ 1A 2V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of -140mV ensures maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 170mV @ 400mA, 4A.The base voltage of the emitter can be kept at 7V to achieve high efficiency.In this part, there is a transition frequency of 100MHz.A maximum collector current of 5A volts is possible.

NSS12600CF8T1G Features

the DC current gain for this device is 250 @ 1A 2V
a collector emitter saturation voltage of -140mV
the vce saturation(Max) is 170mV @ 400mA, 4A
the emitter base voltage is kept at 7V
a transition frequency of 100MHz

NSS12600CF8T1G Applications

There are a lot of ON Semiconductor NSS12600CF8T1G applications of single BJT transistors.

• Muting
• Inverter
• Driver
• Interface