CJD44H11 TR13 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Central Semiconductor Corp stock available on our website
SOT-23
CJD44H11 TR13 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
33 Weeks
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount
YES
Operating Temperature
-65°C~150°C TJ
Packaging
Cut Tape (CT)
Published
2016
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Subcategory
Other Transistors
Configuration
Single
Power - Max
1.75W
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 4A 1V
Current - Collector Cutoff (Max)
10μA
Vce Saturation (Max) @ Ib, Ic
1V @ 400mA, 8A
Voltage - Collector Emitter Breakdown (Max)
80V
Current - Collector (Ic) (Max)
8A
Frequency - Transition
60MHz
Power Dissipation-Max (Abs)
20W
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
2,500
$1.03320
$2.0664
5,000
$1.02144
$5.1072
CJD44H11 TR13 Product Details
CJD44H11 TR13 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 40 @ 4A 1V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 400mA, 8A.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
CJD44H11 TR13 Features
the DC current gain for this device is 40 @ 4A 1V the vce saturation(Max) is 1V @ 400mA, 8A
CJD44H11 TR13 Applications
There are a lot of Central Semiconductor Corp CJD44H11 TR13 applications of single BJT transistors.