CJD44H11 TR13 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Central Semiconductor Corp stock available on our website
SOT-23
CJD44H11 TR13 Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
33 Weeks
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount
YES
Operating Temperature
-65°C~150°C TJ
Packaging
Cut Tape (CT)
Published
2016
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Subcategory
Other Transistors
Configuration
Single
Power - Max
1.75W
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 4A 1V
Current - Collector Cutoff (Max)
10μA
Vce Saturation (Max) @ Ib, Ic
1V @ 400mA, 8A
Voltage - Collector Emitter Breakdown (Max)
80V
Current - Collector (Ic) (Max)
8A
Frequency - Transition
60MHz
Power Dissipation-Max (Abs)
20W
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
CJD44H11 TR13 Product Details
CJD44H11 TR13 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 40 @ 4A 1V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 400mA, 8A.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
CJD44H11 TR13 Features
the DC current gain for this device is 40 @ 4A 1V the vce saturation(Max) is 1V @ 400mA, 8A
CJD44H11 TR13 Applications
There are a lot of Central Semiconductor Corp CJD44H11 TR13 applications of single BJT transistors.