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CJD44H11 TR13

CJD44H11 TR13

CJD44H11 TR13

Central Semiconductor Corp

CJD44H11 TR13 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Central Semiconductor Corp stock available on our website

SOT-23

CJD44H11 TR13 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 33 Weeks
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface MountYES
Operating Temperature-65°C~150°C TJ
PackagingCut Tape (CT)
Published 2016
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory Other Transistors
Configuration Single
Power - Max 1.75W
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 4A 1V
Current - Collector Cutoff (Max) 10μA
Vce Saturation (Max) @ Ib, Ic 1V @ 400mA, 8A
Voltage - Collector Emitter Breakdown (Max) 80V
Current - Collector (Ic) (Max) 8A
Frequency - Transition 60MHz
Power Dissipation-Max (Abs) 20W
RoHS StatusROHS3 Compliant
In-Stock:4175 items

Pricing & Ordering

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CJD44H11 TR13 Product Details

CJD44H11 TR13 Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 40 @ 4A 1V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 400mA, 8A.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.

CJD44H11 TR13 Features


the DC current gain for this device is 40 @ 4A 1V
the vce saturation(Max) is 1V @ 400mA, 8A

CJD44H11 TR13 Applications


There are a lot of Central Semiconductor Corp CJD44H11 TR13 applications of single BJT transistors.

  • Interface
  • Muting
  • Driver
  • Inverter

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