CMNT3906E TR PBFREE datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Central Semiconductor Corp stock available on our website
SOT-23
CMNT3906E TR PBFREE Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
24 Weeks
Mounting Type
Surface Mount
Package / Case
SOT-953
Surface Mount
YES
Operating Temperature
-65°C~150°C TJ
Packaging
Cut Tape (CT)
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Subcategory
Other Transistors
Configuration
Single
Power - Max
250mW
Polarity/Channel Type
PNP
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 10mA 1V
Vce Saturation (Max) @ Ib, Ic
200mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max)
40V
Current - Collector (Ic) (Max)
200mA
Transition Frequency
300MHz
Frequency - Transition
300MHz
Power Dissipation-Max (Abs)
0.25W
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.413000
$0.413
10
$0.389623
$3.89623
100
$0.367569
$36.7569
500
$0.346763
$173.3815
1000
$0.327135
$327.135
CMNT3906E TR PBFREE Product Details
CMNT3906E TR PBFREE Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 10mA 1V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 200mV @ 5mA, 50mA.Parts of this part have transition frequencies of 300MHz.Detection of Collector Emitter Breakdown at 40V maximal voltage is present.
CMNT3906E TR PBFREE Features
the DC current gain for this device is 100 @ 10mA 1V the vce saturation(Max) is 200mV @ 5mA, 50mA a transition frequency of 300MHz
CMNT3906E TR PBFREE Applications
There are a lot of Central Semiconductor Corp CMNT3906E TR PBFREE applications of single BJT transistors.