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CMNT3906E TR PBFREE

CMNT3906E TR PBFREE

CMNT3906E TR PBFREE

Central Semiconductor Corp

CMNT3906E TR PBFREE datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Central Semiconductor Corp stock available on our website

SOT-23

CMNT3906E TR PBFREE Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 24 Weeks
Mounting Type Surface Mount
Package / Case SOT-953
Surface Mount YES
Operating Temperature -65°C~150°C TJ
Packaging Cut Tape (CT)
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory Other Transistors
Configuration Single
Power - Max 250mW
Polarity/Channel Type PNP
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA 1V
Vce Saturation (Max) @ Ib, Ic 200mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max) 40V
Current - Collector (Ic) (Max) 200mA
Transition Frequency 300MHz
Frequency - Transition 300MHz
Power Dissipation-Max (Abs) 0.25W
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.413000 $0.413
10 $0.389623 $3.89623
100 $0.367569 $36.7569
500 $0.346763 $173.3815
1000 $0.327135 $327.135
CMNT3906E TR PBFREE Product Details

CMNT3906E TR PBFREE Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 10mA 1V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 200mV @ 5mA, 50mA.Parts of this part have transition frequencies of 300MHz.Detection of Collector Emitter Breakdown at 40V maximal voltage is present.

CMNT3906E TR PBFREE Features


the DC current gain for this device is 100 @ 10mA 1V
the vce saturation(Max) is 200mV @ 5mA, 50mA
a transition frequency of 300MHz

CMNT3906E TR PBFREE Applications


There are a lot of Central Semiconductor Corp CMNT3906E TR PBFREE applications of single BJT transistors.

  • Interface
  • Muting
  • Inverter
  • Driver

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