MMBT4403-7-F datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
MMBT4403-7-F Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
19 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
7.994566mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2017
Series
Automotive, AEC-Q101
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
-40V
Max Power Dissipation
300mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
-600mA
Frequency
200MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
MMBT4403
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
350mW
Power - Max
300mW
Transistor Application
SWITCHING
Gain Bandwidth Product
200MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
40V
Max Collector Current
600mA
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 150mA 2V
Vce Saturation (Max) @ Ib, Ic
750mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage
40V
Transition Frequency
200MHz
Collector Emitter Saturation Voltage
-750mV
Max Breakdown Voltage
40V
Collector Base Voltage (VCBO)
40V
Emitter Base Voltage (VEBO)
-5V
hFE Min
100
Continuous Collector Current
-600mA
Turn Off Time-Max (toff)
255ns
Height
1mm
Length
3.05mm
Width
1.4mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
MMBT4403-7-F Product Details
MMBT4403-7-F Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 150mA 2V.As it features a collector emitter saturation voltage of -750mV, it allows for maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 750mV @ 50mA, 500mA.Single BJT transistor is recommended to keep the continuous collector voltage at -600mA in order to achieve high efficiency.Keeping the emitter base voltage at -5V allows for a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.200MHz is present in the transition frequency.Single BJT transistor can be broken down at a voltage of 40V volts.Maximum collector currents can be below 600mA volts.
MMBT4403-7-F Features
the DC current gain for this device is 100 @ 150mA 2V a collector emitter saturation voltage of -750mV the vce saturation(Max) is 750mV @ 50mA, 500mA the emitter base voltage is kept at -5V the current rating of this device is -600mA a transition frequency of 200MHz
MMBT4403-7-F Applications
There are a lot of Diodes Incorporated MMBT4403-7-F applications of single BJT transistors.