TSC966CW RPG

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Manufacturer part number:TSC966CW RPG

Manufacturer:Taiwan Semiconductor Corporation

Description:TSC966CW RPG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Taiwan Semiconductor Corporation stock available on our website

Case Package:SOT-23

Datasheet:TSC966CW RPG Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	24 Weeks
Mounting Type	Surface Mount
Package / Case	TO-261-4, TO-261AA
Operating Temperature	150°C TJ
Packaging	Digi-Reel®
Published	2012
Part Status	Active
Moisture Sensitivity Level (MSL)	3 (168 Hours)
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Transistor Type	NPN
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 1mA 5V
Current - Collector Cutoff (Max)	1μA
Vce Saturation (Max) @ Ib, Ic	500mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max)	400V
Current - Collector (Ic) (Max)	300mA
RoHS Status	ROHS3 Compliant

Quantity	Unit Price	Ext. Price
1	$2.398398	$2.398398
10	$2.262640	$22.6264
100	$2.134566	$213.4566
500	$2.013742	$1006.871
1000	$1.899756	$1899.756

TSC966CW RPG Overview

This device has a DC current gain of 100 @ 1mA 5V, which is the ratio between the base current and the collector current.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 5mA, 50mA.Single BJT transistor shows a 400V maximal voltage - Collector EmSingle BJT transistorter Breakdown.