TSC966CW RPG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Taiwan Semiconductor Corporation stock available on our website
SOT-23
TSC966CW RPG Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
24 Weeks
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Operating Temperature
150°C TJ
Packaging
Digi-Reel®
Published
2012
Part Status
Active
Moisture Sensitivity Level (MSL)
3 (168 Hours)
Peak Reflow Temperature (Cel)
260
[email protected] Reflow Temperature-Max (s)
30
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 1mA 5V
Current - Collector Cutoff (Max)
1μA
Vce Saturation (Max) @ Ib, Ic
500mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max)
400V
Current - Collector (Ic) (Max)
300mA
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$2.398398
$2.398398
10
$2.262640
$22.6264
100
$2.134566
$213.4566
500
$2.013742
$1006.871
1000
$1.899756
$1899.756
TSC966CW RPG Product Details
TSC966CW RPG Overview
This device has a DC current gain of 100 @ 1mA 5V, which is the ratio between the base current and the collector current.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 5mA, 50mA.Single BJT transistor shows a 400V maximal voltage - Collector EmSingle BJT transistorter Breakdown.
TSC966CW RPG Features
the DC current gain for this device is 100 @ 1mA 5V the vce saturation(Max) is 500mV @ 5mA, 50mA
TSC966CW RPG Applications
There are a lot of Taiwan Semiconductor Corporation TSC966CW RPG applications of single BJT transistors.