TTC0002(Q) datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Toshiba Semiconductor and Storage stock available on our website
SOT-23
TTC0002(Q) Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-3PL
Number of Pins
3
Operating Temperature
150°C TJ
Packaging
Bulk
Published
2009
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Power Dissipation
180W
Frequency
30MHz
Number of Elements
1
Power Dissipation
180W
Gain Bandwidth Product
30MHz
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
160V
Max Collector Current
18A
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 1A 5V
Current - Collector Cutoff (Max)
1μA ICBO
Vce Saturation (Max) @ Ib, Ic
2V @ 900mA, 9A
Collector Emitter Breakdown Voltage
160V
Collector Emitter Saturation Voltage
2V
Collector Base Voltage (VCBO)
160V
Emitter Base Voltage (VEBO)
5V
Radiation Hardening
No
RoHS Status
RoHS Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$4.521885
$4.521885
10
$4.265929
$42.65929
100
$4.024461
$402.4461
500
$3.796661
$1898.3305
1000
$3.581756
$3581.756
TTC0002(Q) Product Details
TTC0002(Q) Overview
This device has a DC current gain of 80 @ 1A 5V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of 2V ensures maximum design flexibility.When VCE saturation is 2V @ 900mA, 9A, transistor means Ic has reached transistors maximum value (saturated).Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.In extreme cases, the collector current can be as low as 18A volts.
TTC0002(Q) Features
the DC current gain for this device is 80 @ 1A 5V a collector emitter saturation voltage of 2V the vce saturation(Max) is 2V @ 900mA, 9A the emitter base voltage is kept at 5V
TTC0002(Q) Applications
There are a lot of Toshiba Semiconductor and Storage TTC0002(Q) applications of single BJT transistors.