CP396V-2N2369A-CT20 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Central Semiconductor Corp stock available on our website
SOT-23
CP396V-2N2369A-CT20 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
10 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
Die
Supplier Device Package
Die
Operating Temperature
-65°C~200°C TJ
Packaging
Tray
Published
2013
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
500mV
Max Collector Current
200mA
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 10mA 1V
Current - Collector Cutoff (Max)
400nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage
15V
Voltage - Collector Emitter Breakdown (Max)
15V
Current - Collector (Ic) (Max)
200mA
Frequency - Transition
500MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$152.25000
$152.25
CP396V-2N2369A-CT20 Product Details
CP396V-2N2369A-CT20 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 40 @ 10mA 1V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Die is the supplier device package for this product.There is a 15V maximal voltage in the device due to collector-emitter breakdown.Single BJT transistor is possible for the collector current to fall as low as 200mA volts at Single BJT transistors maximum.
CP396V-2N2369A-CT20 Features
the DC current gain for this device is 40 @ 10mA 1V the vce saturation(Max) is 500mV @ 10mA, 100mA the supplier device package of Die
CP396V-2N2369A-CT20 Applications
There are a lot of Central Semiconductor Corp CP396V-2N2369A-CT20 applications of single BJT transistors.