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CP396V-2N2369A-CT20

CP396V-2N2369A-CT20

CP396V-2N2369A-CT20

Central Semiconductor Corp

CP396V-2N2369A-CT20 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Central Semiconductor Corp stock available on our website

SOT-23

CP396V-2N2369A-CT20 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 10 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case Die
Supplier Device Package Die
Operating Temperature -65°C~200°C TJ
Packaging Tray
Published 2013
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Transistor Type NPN
Collector Emitter Voltage (VCEO) 500mV
Max Collector Current 200mA
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 10mA 1V
Current - Collector Cutoff (Max) 400nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage 15V
Voltage - Collector Emitter Breakdown (Max) 15V
Current - Collector (Ic) (Max) 200mA
Frequency - Transition 500MHz
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $152.25000 $152.25
CP396V-2N2369A-CT20 Product Details

CP396V-2N2369A-CT20 Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 40 @ 10mA 1V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Die is the supplier device package for this product.There is a 15V maximal voltage in the device due to collector-emitter breakdown.Single BJT transistor is possible for the collector current to fall as low as 200mA volts at Single BJT transistors maximum.

CP396V-2N2369A-CT20 Features


the DC current gain for this device is 40 @ 10mA 1V
the vce saturation(Max) is 500mV @ 10mA, 100mA
the supplier device package of Die

CP396V-2N2369A-CT20 Applications


There are a lot of Central Semiconductor Corp CP396V-2N2369A-CT20 applications of single BJT transistors.

  • Driver
  • Inverter
  • Interface
  • Muting

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