BC807-40WT1G Overview
This device has a DC current gain of 250 @ 100mA 1V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of -700mV allows maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 700mV @ 50mA, 500mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.In the part, the transition frequency is 100MHz.A maximum collector current of 500mA volts can be achieved.
BC807-40WT1G Features
the DC current gain for this device is 250 @ 100mA 1V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC807-40WT1G Applications
There are a lot of ON Semiconductor BC807-40WT1G applications of single BJT transistors.
- Muting
- Interface
- Driver
- Inverter
