PHPT60603NYX Overview

As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 2A 2V.The collector emitter saturation voltage is 120mV, giving you a wide variety of design options.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 270mV @ 300mA, 3A.For high efficiency, the continuous collector voltage must be kept at 3A.The base voltage of the emitter can be kept at 7V to achieve high efficiency.A transition frequency of 140MHz is present in the part.Single BJT transistor can be broken down at a voltage of 60V volts.A maximum collector current of 3A volts can be achieved.

PHPT60603NYX Features

the DC current gain for this device is 100 @ 2A 2V
a collector emitter saturation voltage of 120mV
the vce saturation(Max) is 270mV @ 300mA, 3A
the emitter base voltage is kept at 7V
a transition frequency of 140MHz

PHPT60603NYX Applications

There are a lot of Nexperia USA Inc. PHPT60603NYX applications of single BJT transistors.

• Interface
• Inverter
• Driver
• Muting