JAN2N930 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
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JAN2N930 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
23 Weeks
Lifecycle Status
IN PRODUCTION (Last Updated: 3 weeks ago)
Contact Plating
Lead, Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-206AA, TO-18-3 Metal Can
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~200°C TJ
Packaging
Bulk
Series
Military, MIL-PRF-19500/253
JESD-609 Code
e0
Pbfree Code
no
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Max Power Dissipation
300mW
Terminal Position
BOTTOM
Terminal Form
WIRE
Pin Count
3
Qualification Status
Qualified
Number of Elements
1
Configuration
SINGLE
Power Dissipation
300mW
Case Connection
COLLECTOR
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
45V
Max Collector Current
30mA
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 10μA 5V
Current - Collector Cutoff (Max)
2nA
Vce Saturation (Max) @ Ib, Ic
1V @ 500μA, 10mA
Collector Emitter Breakdown Voltage
45V
Collector Base Voltage (VCBO)
60V
Emitter Base Voltage (VEBO)
6V
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$9.149376
$9.149376
10
$8.631487
$86.31487
100
$8.142912
$814.2912
500
$7.681992
$3840.996
1000
$7.247162
$7247.162
JAN2N930 Product Details
JAN2N930 Overview
This device has a DC current gain of 100 @ 10μA 5V, which is the ratio between the collector current and the base current.When VCE saturation is 1V @ 500μA, 10mA, transistor means Ic has reached transistors maximum value (saturated).Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Collector current can be as low as 30mA volts at its maximum.
JAN2N930 Features
the DC current gain for this device is 100 @ 10μA 5V the vce saturation(Max) is 1V @ 500μA, 10mA the emitter base voltage is kept at 6V
JAN2N930 Applications
There are a lot of Microsemi Corporation JAN2N930 applications of single BJT transistors.