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JAN2N930

JAN2N930

JAN2N930

Microsemi Corporation

JAN2N930 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

JAN2N930 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 23 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 3 weeks ago)
Contact Plating Lead, Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-206AA, TO-18-3 Metal Can
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~200°C TJ
Packaging Bulk
Series Military, MIL-PRF-19500/253
JESD-609 Code e0
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Max Power Dissipation 300mW
Terminal Position BOTTOM
Terminal Form WIRE
Pin Count 3
Qualification Status Qualified
Number of Elements 1
Configuration SINGLE
Power Dissipation 300mW
Case Connection COLLECTOR
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 45V
Max Collector Current 30mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10μA 5V
Current - Collector Cutoff (Max) 2nA
Vce Saturation (Max) @ Ib, Ic 1V @ 500μA, 10mA
Collector Emitter Breakdown Voltage 45V
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 6V
Radiation Hardening No
RoHS Status Non-RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $9.149376 $9.149376
10 $8.631487 $86.31487
100 $8.142912 $814.2912
500 $7.681992 $3840.996
1000 $7.247162 $7247.162
JAN2N930 Product Details

JAN2N930 Overview


This device has a DC current gain of 100 @ 10μA 5V, which is the ratio between the collector current and the base current.When VCE saturation is 1V @ 500μA, 10mA, transistor means Ic has reached transistors maximum value (saturated).Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Collector current can be as low as 30mA volts at its maximum.

JAN2N930 Features


the DC current gain for this device is 100 @ 10μA 5V
the vce saturation(Max) is 1V @ 500μA, 10mA
the emitter base voltage is kept at 6V

JAN2N930 Applications


There are a lot of Microsemi Corporation JAN2N930 applications of single BJT transistors.

  • Inverter
  • Interface
  • Driver
  • Muting

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