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BD438G

BD438G

BD438G

Rochester Electronics, LLC

BD438G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website

SOT-23

BD438G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Supplier Device Package TO-225AA
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 36W
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 85 @ 500mA 1V
Current - Collector Cutoff (Max) 100μA ICBO
Vce Saturation (Max) @ Ib, Ic 700mV @ 300mA, 3A
Voltage - Collector Emitter Breakdown (Max) 45V
Current - Collector (Ic) (Max) 4A
Frequency - Transition 3MHz
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.31000 $0.31
500 $0.3069 $153.45
1000 $0.3038 $303.8
1500 $0.3007 $451.05
2000 $0.2976 $595.2
2500 $0.2945 $736.25
BD438G Product Details

BD438G Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 85 @ 500mA 1V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 700mV @ 300mA, 3A.Product package TO-225AA comes from the supplier.The device has a 45V maximal voltage - Collector Emitter Breakdown.

BD438G Features


the DC current gain for this device is 85 @ 500mA 1V
the vce saturation(Max) is 700mV @ 300mA, 3A
the supplier device package of TO-225AA

BD438G Applications


There are a lot of Rochester Electronics, LLC BD438G applications of single BJT transistors.

  • Interface
  • Inverter
  • Muting
  • Driver

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