BD438G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
BD438G Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Supplier Device Package
TO-225AA
Operating Temperature
-55°C~150°C TJ
Packaging
Bulk
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Power - Max
36W
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
85 @ 500mA 1V
Current - Collector Cutoff (Max)
100μA ICBO
Vce Saturation (Max) @ Ib, Ic
700mV @ 300mA, 3A
Voltage - Collector Emitter Breakdown (Max)
45V
Current - Collector (Ic) (Max)
4A
Frequency - Transition
3MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.31000
$0.31
500
$0.3069
$153.45
1000
$0.3038
$303.8
1500
$0.3007
$451.05
2000
$0.2976
$595.2
2500
$0.2945
$736.25
BD438G Product Details
BD438G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 85 @ 500mA 1V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 700mV @ 300mA, 3A.Product package TO-225AA comes from the supplier.The device has a 45V maximal voltage - Collector Emitter Breakdown.
BD438G Features
the DC current gain for this device is 85 @ 500mA 1V the vce saturation(Max) is 700mV @ 300mA, 3A the supplier device package of TO-225AA
BD438G Applications
There are a lot of Rochester Electronics, LLC BD438G applications of single BJT transistors.