MJD112G Overview

As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 1000 @ 2A 3V.With a collector emitter saturation voltage of 2V, it offers maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 3V @ 40mA, 4A.A constant collector voltage of 2A is necessary for high efficiency.Keeping the emitter base voltage at 5V can result in a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (2A).As you can see, the part has a transition frequency of 25MHz.Single BJT transistor is possible to have a collector current as low as 2A volts at Single BJT transistors maximum.

MJD112G Features

the DC current gain for this device is 1000 @ 2A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 40mA, 4A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
a transition frequency of 25MHz

MJD112G Applications

There are a lot of ON Semiconductor MJD112G applications of single BJT transistors.

• Interface
• Driver
• Muting
• Inverter