2SD1060R-1EX

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Manufacturer part number:2SD1060R-1EX

Manufacturer:ON Semiconductor

Description:2SD1060R-1EX datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:2SD1060R-1EX Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Operating Temperature	150°C TJ
Packaging	Tube
Published	2013
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Power Dissipation	1.75W
Power - Max	1.75W
Transistor Type	NPN
Collector Emitter Voltage (VCEO)	300mV
Max Collector Current	5A
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 1A 2V
Current - Collector Cutoff (Max)	100μA ICBO
Vce Saturation (Max) @ Ib, Ic	300mV @ 300mA, 3A
Collector Emitter Breakdown Voltage	50V
Frequency - Transition	30MHz
Collector Base Voltage (VCBO)	60V
Radiation Hardening	No
RoHS Status	ROHS3 Compliant

Quantity	Unit Price	Ext. Price
300	$1.10250	$330.75

2SD1060R-1EX Overview

This device has a DC current gain of 100 @ 1A 2V, which is the ratio between the collector current and the base current.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 300mV @ 300mA, 3A.Collector current can be as low as 5A volts at its maximum.