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2SD1060R-1EX

2SD1060R-1EX

2SD1060R-1EX

ON Semiconductor

2SD1060R-1EX datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

2SD1060R-1EX Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Operating Temperature150°C TJ
PackagingTube
Published 2013
Part StatusNot For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation1.75W
Power - Max 1.75W
Transistor Type NPN
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 5A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1A 2V
Current - Collector Cutoff (Max) 100μA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 300mA, 3A
Collector Emitter Breakdown Voltage50V
Frequency - Transition 30MHz
Collector Base Voltage (VCBO) 60V
Radiation HardeningNo
RoHS StatusROHS3 Compliant
In-Stock:6046 items

Pricing & Ordering

QuantityUnit PriceExt. Price
300$1.10250$330.75

2SD1060R-1EX Product Details

2SD1060R-1EX Overview


This device has a DC current gain of 100 @ 1A 2V, which is the ratio between the collector current and the base current.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 300mV @ 300mA, 3A.Collector current can be as low as 5A volts at its maximum.

2SD1060R-1EX Features


the DC current gain for this device is 100 @ 1A 2V
the vce saturation(Max) is 300mV @ 300mA, 3A

2SD1060R-1EX Applications


There are a lot of ON Semiconductor 2SD1060R-1EX applications of single BJT transistors.

  • Interface
  • Driver
  • Inverter
  • Muting

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