FCX658ATA Overview

As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 35 @ 200mA 10V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 200mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 200mV @ 10mA, 100mA.Single BJT transistor is essential to maintain the continuous collector voltage at 500mA to achieve high efficiency.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In this part, there is a transition frequency of 50MHz.This device can take an input voltage of 400V volts before it breaks down.A maximum collector current of 500mA volts can be achieved.

FCX658ATA Features

the DC current gain for this device is 35 @ 200mA 10V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 200mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 50MHz

FCX658ATA Applications

There are a lot of Diodes Incorporated FCX658ATA applications of single BJT transistors.

• Inverter
• Interface
• Driver
• Muting