BCP5216H6327XTSA1 Overview
This device has a DC current gain of 100 @ 150mA 2V, which is the ratio between the collector current and the base current.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.An emitter's base voltage can be kept at 5V to gain high efficiency.There is a transition frequency of 125MHz in the part.During maximum operation, collector current can be as low as 1A volts.
BCP5216H6327XTSA1 Features
the DC current gain for this device is 100 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 125MHz
BCP5216H6327XTSA1 Applications
There are a lot of Infineon Technologies BCP5216H6327XTSA1 applications of single BJT transistors.
- Interface
- Inverter
- Muting
- Driver
