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BCP5216H6327XTSA1

BCP5216H6327XTSA1

BCP5216H6327XTSA1

Infineon Technologies

BCP5216H6327XTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available on our website

SOT-23

BCP5216H6327XTSA1 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 6 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation 2W
Terminal Position DUAL
Terminal Form GULL WING
Frequency 125MHz
Base Part Number BCP52
Number of Elements 1
Configuration SINGLE
Power Dissipation 2W
Case Connection COLLECTOR
Transistor Application AMPLIFIER
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 500mV
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage 60V
Current - Collector (Ic) (Max) 1A
Transition Frequency 125MHz
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 5V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.189320 $1.18932
10 $1.122000 $11.22
100 $1.058491 $105.8491
500 $0.998576 $499.288
1000 $0.942053 $942.053
BCP5216H6327XTSA1 Product Details

BCP5216H6327XTSA1 Overview


This device has a DC current gain of 100 @ 150mA 2V, which is the ratio between the collector current and the base current.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.An emitter's base voltage can be kept at 5V to gain high efficiency.There is a transition frequency of 125MHz in the part.During maximum operation, collector current can be as low as 1A volts.

BCP5216H6327XTSA1 Features


the DC current gain for this device is 100 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 125MHz

BCP5216H6327XTSA1 Applications


There are a lot of Infineon Technologies BCP5216H6327XTSA1 applications of single BJT transistors.

  • Interface
  • Inverter
  • Muting
  • Driver

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