BCP5216H6327XTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available on our website
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BCP5216H6327XTSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
6 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Number of Pins
4
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2011
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Subcategory
Other Transistors
Max Power Dissipation
2W
Terminal Position
DUAL
Terminal Form
GULL WING
Frequency
125MHz
Base Part Number
BCP52
Number of Elements
1
Configuration
SINGLE
Power Dissipation
2W
Case Connection
COLLECTOR
Transistor Application
AMPLIFIER
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
500mV
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 150mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage
60V
Current - Collector (Ic) (Max)
1A
Transition Frequency
125MHz
Collector Base Voltage (VCBO)
60V
Emitter Base Voltage (VEBO)
5V
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.189320
$1.18932
10
$1.122000
$11.22
100
$1.058491
$105.8491
500
$0.998576
$499.288
1000
$0.942053
$942.053
BCP5216H6327XTSA1 Product Details
BCP5216H6327XTSA1 Overview
This device has a DC current gain of 100 @ 150mA 2V, which is the ratio between the collector current and the base current.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.An emitter's base voltage can be kept at 5V to gain high efficiency.There is a transition frequency of 125MHz in the part.During maximum operation, collector current can be as low as 1A volts.
BCP5216H6327XTSA1 Features
the DC current gain for this device is 100 @ 150mA 2V the vce saturation(Max) is 500mV @ 50mA, 500mA the emitter base voltage is kept at 5V a transition frequency of 125MHz
BCP5216H6327XTSA1 Applications
There are a lot of Infineon Technologies BCP5216H6327XTSA1 applications of single BJT transistors.