CP710V-MPSA92-CT20 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Central Semiconductor Corp stock available on our website
SOT-23
CP710V-MPSA92-CT20 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
10 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
Die
Supplier Device Package
Die
Operating Temperature
-65°C~150°C TJ
Packaging
Tray
Published
2013
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
500mV
Max Collector Current
500mA
DC Current Gain (hFE) (Min) @ Ic, Vce
25 @ 30mA 10V
Current - Collector Cutoff (Max)
250nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 2mA, 20mA
Collector Emitter Breakdown Voltage
300V
Voltage - Collector Emitter Breakdown (Max)
300V
Current - Collector (Ic) (Max)
500mA
Frequency - Transition
50MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$152.25000
$152.25
10
$144.90000
$1449
25
$140.00000
$3500
CP710V-MPSA92-CT20 Product Details
CP710V-MPSA92-CT20 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 25 @ 30mA 10V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Single BJT transistor comes in a supplier device package of Die.The device exhibits a collector-emitter breakdown at 300V.The maximum collector current is 500mA volts.
CP710V-MPSA92-CT20 Features
the DC current gain for this device is 25 @ 30mA 10V the vce saturation(Max) is 500mV @ 2mA, 20mA the supplier device package of Die
CP710V-MPSA92-CT20 Applications
There are a lot of Central Semiconductor Corp CP710V-MPSA92-CT20 applications of single BJT transistors.