CXT5401 TR PBFREE datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Central Semiconductor Corp stock available on our website
SOT-23
CXT5401 TR PBFREE Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
20 Weeks
Mounting Type
Surface Mount
Package / Case
TO-243AA
Surface Mount
YES
Operating Temperature
-65°C~150°C TJ
Packaging
Cut Tape (CT)
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Subcategory
Other Transistors
Configuration
Single
Power - Max
1.2W
Polarity/Channel Type
PNP
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
60 @ 10mA 5V
Current - Collector Cutoff (Max)
50nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max)
150V
Current - Collector (Ic) (Max)
600mA
Transition Frequency
100MHz
Frequency - Transition
300MHz
Power Dissipation-Max (Abs)
1.2W
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.579414
$0.579414
10
$0.546617
$5.46617
100
$0.515677
$51.5677
500
$0.486487
$243.2435
1000
$0.458951
$458.951
CXT5401 TR PBFREE Product Details
CXT5401 TR PBFREE Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 60 @ 10mA 5V.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.In this part, there is a transition frequency of 100MHz.The device exhibits a collector-emitter breakdown at 150V.
CXT5401 TR PBFREE Features
the DC current gain for this device is 60 @ 10mA 5V the vce saturation(Max) is 500mV @ 5mA, 50mA a transition frequency of 100MHz
CXT5401 TR PBFREE Applications
There are a lot of Central Semiconductor Corp CXT5401 TR PBFREE applications of single BJT transistors.