NSV1C300ET4G-VF01 Overview

As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 180 @ 500mA 2V.A VCE saturation (Max) of 400mV @ 300mA, 3A means Ic has reached its maximum value(saturated).There is a transition frequency of 100MHz in the part.Single BJT transistor shows a 100V maximal voltage - Collector EmSingle BJT transistorter Breakdown.

NSV1C300ET4G-VF01 Features

the DC current gain for this device is 180 @ 500mA 2V
the vce saturation(Max) is 400mV @ 300mA, 3A
a transition frequency of 100MHz

NSV1C300ET4G-VF01 Applications

There are a lot of ON Semiconductor NSV1C300ET4G-VF01 applications of single BJT transistors.

• Muting
• Inverter
• Driver
• Interface