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JAN2N3735

JAN2N3735

JAN2N3735

Microsemi Corporation

JAN2N3735 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

JAN2N3735 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 23 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-205AD, TO-39-3 Metal Can
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-65°C~200°C TJ
PackagingBulk
Published 2007
Series Military, MIL-PRF-19500/395
JESD-609 Code e0
Pbfree Code no
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
HTS Code8541.29.00.95
Max Power Dissipation1W
Terminal Position BOTTOM
Terminal FormWIRE
Qualification StatusQualified
Number of Elements 1
Configuration SINGLE
Power - Max 1W
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 900mV
Max Collector Current 1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 1A 1.5V
Current - Collector Cutoff (Max) 10μA ICBO
Vce Saturation (Max) @ Ib, Ic 900mV @ 100mA, 1A
Collector Emitter Breakdown Voltage40V
Collector Base Voltage (VCBO) 75V
Turn Off Time-Max (toff) 60ns
Turn On Time-Max (ton) 48ns
Radiation HardeningNo
RoHS StatusNon-RoHS Compliant
In-Stock:760 items

Pricing & Ordering

QuantityUnit PriceExt. Price
100$10.79930$1079.93

JAN2N3735 Product Details

JAN2N3735 Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 20 @ 1A 1.5V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 900mV @ 100mA, 1A.Single BJT transistor is possible to have a collector current as low as 1.5A volts at Single BJT transistors maximum.

JAN2N3735 Features


the DC current gain for this device is 20 @ 1A 1.5V
the vce saturation(Max) is 900mV @ 100mA, 1A

JAN2N3735 Applications


There are a lot of Microsemi Corporation JAN2N3735 applications of single BJT transistors.

  • Inverter
  • Driver
  • Muting
  • Interface

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