MMBT2131T1G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 150 @ 100mA 3V.A collector emitter saturation voltage of 1V ensures maximum design flexibility.When VCE saturation is 400mV @ 70mA, 700mA, transistor means Ic has reached transistors maximum value (saturated).An emitter's base voltage can be kept at 5V to gain high efficiency.Its current rating is -700mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.A maximum collector current of 700mA volts can be achieved.
MMBT2131T1G Features
the DC current gain for this device is 150 @ 100mA 3V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 400mV @ 70mA, 700mA
the emitter base voltage is kept at 5V
the current rating of this device is -700mA
MMBT2131T1G Applications
There are a lot of ON Semiconductor MMBT2131T1G applications of single BJT transistors.
- Muting
- Driver
- Inverter
- Interface
