MJE172G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 50 @ 100mA 1V.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1.7V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.7V @ 600mA, 3A.With the emitter base voltage set at 7V, an efficient operation can be achieved.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 3A current rating.The part has a transition frequency of 50MHz.A maximum collector current of 3A volts is possible.
MJE172G Features
the DC current gain for this device is 50 @ 100mA 1V
a collector emitter saturation voltage of 1.7V
the vce saturation(Max) is 1.7V @ 600mA, 3A
the emitter base voltage is kept at 7V
the current rating of this device is 3A
a transition frequency of 50MHz
MJE172G Applications
There are a lot of ON Semiconductor MJE172G applications of single BJT transistors.
- Interface
- Muting
- Driver
- Inverter
