PBSS5540X,135 Overview

As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 150 @ 2A 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 375mV @ 500mA, 5A.Keeping the emitter base voltage at -6V allows for a high level of efficiency.A transition frequency of 60MHz is present in the part.Breakdown input voltage is 40V volts.Collector current can be as low as 4A volts at its maximum.

PBSS5540X,135 Features

the DC current gain for this device is 150 @ 2A 2V
the vce saturation(Max) is 375mV @ 500mA, 5A
the emitter base voltage is kept at -6V
a transition frequency of 60MHz

PBSS5540X,135 Applications

There are a lot of Nexperia USA Inc. PBSS5540X,135 applications of single BJT transistors.

• Driver
• Interface
• Muting
• Inverter