MMBT5401LT3G Overview

This device has a DC current gain of 60 @ 10mA 5V, which is the ratio between the collector current and the base current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -500mV, which allows maximum flexibilSingle BJT transistory in design.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.The base voltage of the emitter can be kept at 5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -500mA.There is a transition frequency of 100MHz in the part.Breakdown input voltage is 150V volts.Maximum collector currents can be below 500mA volts.

MMBT5401LT3G Features

the DC current gain for this device is 60 @ 10mA 5V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 5mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is -500mA
a transition frequency of 100MHz

MMBT5401LT3G Applications

There are a lot of ON Semiconductor MMBT5401LT3G applications of single BJT transistors.

• Inverter
• Driver
• Muting
• Interface