2SC5824T100R Overview

As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 180 @ 100mA 2V.The collector emitter saturation voltage is 200V, giving you a wide variety of design options.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 200mA, 2A.A constant collector voltage of 3A is necessary for high efficiency.The base voltage of the emitter can be kept at 6V to achieve high efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (3A).Parts of this part have transition frequencies of 200MHz.Input voltage breakdown is available at 60V volts.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.

2SC5824T100R Features

the DC current gain for this device is 180 @ 100mA 2V
a collector emitter saturation voltage of 200V
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 6V
the current rating of this device is 3A
a transition frequency of 200MHz

2SC5824T100R Applications

There are a lot of ROHM Semiconductor 2SC5824T100R applications of single BJT transistors.

• Inverter
• Driver
• Muting
• Interface