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PHE13007,127

  • PHE13007,127
  • PHE13007,127

PHE13007,127

PHE13007,127

WeEn Semiconductors

PHE13007,127 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from WeEn Semiconductors stock available on our website

SOT-23

PHE13007,127 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tube
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Position SINGLE
Base Part Number PHE13007
Reference Standard IEC-134
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE
Case Connection COLLECTOR
Power - Max 80W
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 8 @ 2A 5V
Current - Collector Cutoff (Max) 200μA
JEDEC-95 Code TO-220AB
Vce Saturation (Max) @ Ib, Ic 350mV @ 1A, 5A
Voltage - Collector Emitter Breakdown (Max) 400V
Current - Collector (Ic) (Max) 8A
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $2.474125 $2.474125
10 $2.334080 $23.3408
100 $2.201962 $220.1962
500 $2.077323 $1038.6615
1000 $1.959739 $1959.739
PHE13007,127 Product Details

PHE13007,127 Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 8 @ 2A 5V DC current gain.A VCE saturation (Max) of 350mV @ 1A, 5A means Ic has reached its maximum value(saturated).A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.

PHE13007,127 Features


the DC current gain for this device is 8 @ 2A 5V
the vce saturation(Max) is 350mV @ 1A, 5A

PHE13007,127 Applications


There are a lot of WeEn Semiconductors PHE13007,127 applications of single BJT transistors.

  • Driver
  • Interface
  • Inverter
  • Muting

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