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BC858AW-G

  • BC858AW-G
  • BC858AW-G

BC858AW-G

BC858AW-G

Comchip Technology

BC858AW-G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Comchip Technology stock available on our website

SOT-23

BC858AW-G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 10 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Operating Temperature -65°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish TIN
Subcategory Other Transistors
Max Power Dissipation 150mW
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
Configuration Single
Power - Max 150mW
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 650mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 125 @ 2.2mA 5V
Current - Collector Cutoff (Max) 15nA ICBO
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage 30V
Transition Frequency 100MHz
Frequency - Transition 100MHz
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $0.04724 $0.14172
BC858AW-G Product Details

BC858AW-G Overview


DC current gain in this device equals 125 @ 2.2mA 5V, which is the ratio of the base current to the collector current.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 650mV @ 5mA, 100mA.Parts of this part have transition frequencies of 100MHz.Maximum collector currents can be below 100mA volts.

BC858AW-G Features


the DC current gain for this device is 125 @ 2.2mA 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA
a transition frequency of 100MHz

BC858AW-G Applications


There are a lot of Comchip Technology BC858AW-G applications of single BJT transistors.

  • Driver
  • Inverter
  • Muting
  • Interface

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