2SD2153T100U datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website
SOT-23
2SD2153T100U Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
13 Weeks
Contact Plating
Copper, Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-243AA
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2014
JESD-609 Code
e2
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Copper (Sn/Cu)
HTS Code
8541.21.00.75
Subcategory
Other Transistors
Voltage - Rated DC
25V
Max Power Dissipation
2W
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
Reach Compliance Code
not_compliant
Current Rating
2A
[email protected] Reflow Temperature-Max (s)
10
Base Part Number
2SD2153
Pin Count
3
JESD-30 Code
R-PSSO-F3
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Case Connection
COLLECTOR
Transistor Application
AMPLIFIER
Gain Bandwidth Product
110MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
25V
Max Collector Current
2A
DC Current Gain (hFE) (Min) @ Ic, Vce
820 @ 500mA 6V
Current - Collector Cutoff (Max)
500nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 20mA, 1A
Collector Emitter Breakdown Voltage
25V
Transition Frequency
110MHz
Max Breakdown Voltage
25V
Collector Base Voltage (VCBO)
30V
Emitter Base Voltage (VEBO)
6V
hFE Min
560
Continuous Collector Current
2A
VCEsat-Max
0.5 V
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.235596
$0.235596
10
$0.222261
$2.22261
100
$0.209680
$20.968
500
$0.197811
$98.9055
1000
$0.186614
$186.614
2SD2153T100U Product Details
2SD2153T100U Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 820 @ 500mA 6V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 20mA, 1A.For high efficiency, the continuous collector voltage must be kept at 2A.A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (2A).In the part, the transition frequency is 110MHz.There is a breakdown input voltage of 25V volts that it can take.A maximum collector current of 2A volts can be achieved.
2SD2153T100U Features
the DC current gain for this device is 820 @ 500mA 6V the vce saturation(Max) is 500mV @ 20mA, 1A the emitter base voltage is kept at 6V the current rating of this device is 2A a transition frequency of 110MHz
2SD2153T100U Applications
There are a lot of ROHM Semiconductor 2SD2153T100U applications of single BJT transistors.