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2SD2153T100U

2SD2153T100U

2SD2153T100U

ROHM Semiconductor

2SD2153T100U datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website

SOT-23

2SD2153T100U Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 13 Weeks
Contact Plating Copper, Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2014
JESD-609 Code e2
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Copper (Sn/Cu)
HTS Code 8541.21.00.75
Subcategory Other Transistors
Voltage - Rated DC 25V
Max Power Dissipation 2W
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Reach Compliance Code not_compliant
Current Rating 2A
[email protected] Reflow Temperature-Max (s) 10
Base Part Number 2SD2153
Pin Count 3
JESD-30 Code R-PSSO-F3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Transistor Application AMPLIFIER
Gain Bandwidth Product 110MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 25V
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 820 @ 500mA 6V
Current - Collector Cutoff (Max) 500nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 20mA, 1A
Collector Emitter Breakdown Voltage 25V
Transition Frequency 110MHz
Max Breakdown Voltage 25V
Collector Base Voltage (VCBO) 30V
Emitter Base Voltage (VEBO) 6V
hFE Min 560
Continuous Collector Current 2A
VCEsat-Max 0.5 V
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.235596 $0.235596
10 $0.222261 $2.22261
100 $0.209680 $20.968
500 $0.197811 $98.9055
1000 $0.186614 $186.614
2SD2153T100U Product Details

2SD2153T100U Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 820 @ 500mA 6V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 20mA, 1A.For high efficiency, the continuous collector voltage must be kept at 2A.A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (2A).In the part, the transition frequency is 110MHz.There is a breakdown input voltage of 25V volts that it can take.A maximum collector current of 2A volts can be achieved.

2SD2153T100U Features


the DC current gain for this device is 820 @ 500mA 6V
the vce saturation(Max) is 500mV @ 20mA, 1A
the emitter base voltage is kept at 6V
the current rating of this device is 2A
a transition frequency of 110MHz

2SD2153T100U Applications


There are a lot of ROHM Semiconductor 2SD2153T100U applications of single BJT transistors.

  • Inverter
  • Muting
  • Interface
  • Driver

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